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Nonlinear optical response of As+-ion implanted GaAs studied using time resolved reflectivity

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.116576
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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
SubjectABSORPTIVITY; ARSENIC ADDITIONS; CARRIER LIFETIME; ENERGY GAP; GALLIUM ARSENIDES; ION IMPLANTATION; REFLECTION SPECTROSCOPY; REFRACTIVE INDEX
Abstract
The transient reflectivity response of GaAs with a 2% excess As concentration (GaAs:As), prepared by As+ ion implantation, has been measured at photon energies near the band gap. Results are compared with similar measurements on implanted GaAs with a 0.01% excess As concentration, and unimplanted GaAs. For GaAs:As, the transient refractive index change Δn, is larger than, but of the opposite sign to that of unimplanted GaAs. The measured carrier lifetime of 1±0.1 ps is identical to that of low-temperature GaAs. The wavelength dependence of Δn indicates the presence of an induced absorption peak at photon energies near the band gap, which is attributed to band-gap renormalization.
Publication date
In
  • Applied Physics Letters 68, no. 23 (3 June 1996): 3287–3289.
LanguageEnglish
Peer reviewedYes
NPARC number12337931
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Record identifier5087bddd-31b7-4a40-8078-f4414d256019
Record created2009-09-10
Record modified2020-03-20
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