Lanthanum Monosulfide Thin Films Grown on MgO Substrates for Field Emission

DOI	Resolve DOI: https://doi.org/10.1109/IVNC.2007.4481019
Author	Search for: Binh, Vu-Thien; Search for: Fairchild, S.; Search for: Grazulis, L.; Search for: Cahay, M.; Search for: Garre, K.; Search for: Poitras, Daniel¹; Search for: Wu, X.; Search for: Lockwood, David¹; Search for: Semet, V.
Editor	Search for: Busta, H.
Affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Conference	20th International Vacuum Nanoelectronics Conference
Abstract	In this work and with a view to optimizing their FE properties, LaS films of increased crystallinity were obtained by PLD on lattice matched MgO substrates, at elevated substrate temperatures and in a background gas of H2S. The thin films have been characterized by high resolution transmission electron microscopy, atomic force microscopy (AFM), X-ray diffraction, ellipsometry and Raman spectroscopy. The FE properties of the films have been characterized by scanning anode field emission microscopy.
Publication date	2007
In	Technical Digest of the 20th International Vacuum Nanoelectronics Conference (2007): 253–254.
Language	English
Identifier	IEEE Cat 07TH8951
NPARC number	12346686
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Record identifier	51d2b97d-67ac-49ca-b0c3-c2de0600c2d0
Record created	2009-09-17
Record modified	2020-05-10