| DOI | Resolve DOI: https://doi.org/10.1063/1.3681328 |
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| Author | Search for: Lackner, D.; Search for: Steger, M.; Search for: Thewalt, M. L. W.; Search for: Pitts, O. J.; Search for: Cherng, Y. T.; Search for: Watkins, S. P.; Search for: Plis, E.; Search for: Krishna, S. |
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| Format | Text, Article |
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| Abstract | InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been proposed as an alternative to InAs/(In)GaSb short period superlattices for mid- to long infrared photodetectors. Photoluminescence data at 4 K of OMVPE grown InAsSb (multi-) quantum wells in an InAs matrix on InAs and GaSb substrates is presented for Sb compositions between 4% and 27%. The measured transition energies are simulated with a self-consistent Poisson and Schroedinger equation solver that includes strain and band-offsets. The fitted parameters are then used to predict the type II transition energies of InAsSb/InAs strain balanced superlattice absorber stacks at 77 K for different compositions and periods. The optical matrix element was calculated and compared with InAs/(In)GaSb superlattices. The InAsSb/InAs structures can be designed with higher or equal matrix elements for longer periods. Finally, the initial optical response data of an unoptimized strain balanced InAs0.79Sb0.21/InAs detector with a 40 nm period are shown. Its cutoff wavelength is 0.15 eV (8.5 μm), in good agreement with the predicted type II transition energy of 0.17 eV. |
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| Publication date | 2012-02-10 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NRC publication | This is a non-NRC publication"Non-NRC publications" are publications authored by NRC employees prior to their employment by NRC. |
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| NPARC number | 21269027 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 52d99548-8bb4-4ef5-9746-951963418ff7 |
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| Record created | 2013-12-02 |
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| Record modified | 2020-04-21 |
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