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Growth mode of coherent Si1-xGex islands on Si(100)

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/NANO.2006.247739
AuthorSearch for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Conference6th IEEE Conference on Nanotechnology, 17-20 July 2006, Cincinnati, Ohio, USA
Abstract
Coherent Si1-xGexisland growth by molecular beam epitaxy is studied for a fixed growth temperature but for different Ge concentrations x in the range 0.37-0.56. A combined transmission electron microscope, x-ray diffraction, and Raman spectroscopy characterization of the samples showed that during growth the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher.
Publication date
In
  • Nanotechnology, 2006, IEEE-NANO 2006, Sixth IEEE Conference on 2 (2006): 655–658.
LanguageEnglish
NPARC number12346455
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Record identifier56001502-978b-4ba5-8cdb-d95fc36484f9
Record created2009-09-17
Record modified2020-04-22
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