| DOI | Resolve DOI: https://doi.org/10.1116/1.1856466 |
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| Author | Search for: Malac, Marek1; Search for: Egerton, Ray; Search for: Freeman, Mark; Search for: Lau, June; Search for: Zhu, Yimei; Search for: Wu, Lijun |
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| Affiliation | - National Research Council of Canada. National Institute for Nanotechnology
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| Format | Text, Article |
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| Subject | electron beam lithography; nanolithography; sputter etching; transmission electron microscopy |
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| Abstract | Negative tone patterns were created by polymer-contamination writing in a transmission electron microscope. Typical line edge roughness of the polymer lines was found to be below 1 nm. The patterns were transferred to bismuth films using an anisotropic ion etch, resulting in final bismuth line edge roughness less than 2 nm. This low roughness was achieved by growing the bismuth film such that the same crystallographic planes were exposed to the etching flux of ions. |
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| Publication date | 2005-01-21 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NRC number | 128 |
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| NPARC number | 12338129 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 5705872c-f6ff-495a-97a1-aae0b8ae2d4b |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-07 |
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