| Download | - View accepted manuscript: Tuning the electrically evaluated electron Landé g factor in GaAs quantum dots and quantum wells of different well widths (PDF, 517 KB)
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| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevB.90.235310 |
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| Author | Search for: Allison, G.; Search for: Fujita, T.; Search for: Morimoto, K.; Search for: Teraoka, S.; Search for: Larsson, M.; Search for: Kiyama, H.; Search for: Oiwa, A.; Search for: Haffouz, S.1; Search for: Austing, D. G.2; Search for: Ludwig, A.; Search for: Wieck, A. D.; Search for: Tarucha, S. |
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| Name affiliation | - National Research Council of Canada. Information and Communication Technologies
- National Research Council of Canada
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| Format | Text, Article |
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| Abstract | We evaluate the Landé g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Landé electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magnetotransport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Landé electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs. |
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| Publication date | 2014-12-11 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21275519 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 5866e9d8-d244-4cf3-9f80-6e71a61623d9 |
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| Record created | 2015-07-14 |
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| Record modified | 2020-06-04 |
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