| Download | - View full text: Fully printed and encapsulated SWCNT-based thin film transistors via a combination of R2R gravure and inkjet printing (PDF, 1 MB)
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| DOI | Resolve DOI: https://doi.org/10.1021/acsami.6b06838 |
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| Author | Search for: Homenick, Christa M.1 ; Search for: James, Robert; Search for: Lopinski, Gregory P.2 ; Search for: Dunford, Jeffrey1 ; Search for: Sun, Junfeng; Search for: Park, Hyejin; Search for: Jung, Younsu; Search for: Cho, Gyoujin; Search for: Malenfant, Patrick R. L.1 |
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| Name affiliation | - National Research Council Canada. Security and Disruptive Technologies
- National Research Council Canada. Measurement Science and Standards
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| Format | Text |
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| Type | Article |
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| Journal title | ACS Applied Materials & Interfaces |
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| ISSN | 1944-8244
1944-8252 |
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| Subject | fully printed; thin film transistor; enriched semiconducting carbon nanotube ink; SWCNT ink formulation; roll-to-roll |
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| Abstract | Fully printed thin film transistors (TFT) based on poly(9,9-di-n-dodecylfluorene) (PFDD) wrapped semiconducting single walled carbon nanotube (SWCNT) channels are fabricated by a practical route that combines roll-to-roll (R2R) gravure and ink jet printing. SWCNT network density is easily controlled via ink formulation (concentration and polymer:CNT ratio) and jetting conditions (droplet size, drop spacing, and number of printed layers). Optimum inkjet printing conditions are established on Si/SiO₂ in which an ink consisting of 6:1 PFDD:SWCNT ratio with 50 mg L⁻¹ SWCNT concentration printed at a drop spacing of 20 μm results in TFTs with mobilities of ∼25 cm² V⁻¹ s⁻¹ and on-/off-current ratios > 105. These conditions yield excellent network uniformity and are used in a fully additive process to fabricate fully printed TFTs on PET substrates with mobility values > 5 cm² V⁻¹ s⁻¹ (R2R printed gate electrode and dielectric; inkjet printed channel and source/drain electrodes). An inkjet printed encapsulation layer completes the TFT process (fabricated in bottom gate, top contact TFT configuration) and provides mobilities > 1 cm² V⁻¹ s⁻¹ with good operational stability, based on the performance of an inverter circuit. An array of 20 TFTs shows that most have less than 10% variability in terms of threshold voltage, transconductance, on-current, and subthreshold swing. |
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| Publication date | 2016-09-23 |
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| Terms of use | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23000810 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction |
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Record identifier | 5c9e5f2f-e987-427a-a147-3f9bc515eded | | Record created | 2016-10-12 |
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| Record modified | 2019-03-08 |
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