Download | - View final version: Measurement of the non-radiative minority recombination lifetime and the effective radiative recombination coefficient in GaAs (PDF, 1.4 MiB)
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DOI | Resolve DOI: https://doi.org/10.1063/1.5051709 |
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Author | Search for: Niemeyer, M.ORCID identifier: https://orcid.org/0000-0001-7349-5938; Search for: Kleinschmidt, P.; Search for: Walker, A. W.1ORCID identifier: https://orcid.org/0000-0002-1791-2140; Search for: Mundt, L. E.; Search for: Timm, C.; Search for: Lang, R.; Search for: Hannappel, T.; Search for: Lackner, D. |
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Affiliation | - National Research Council of Canada. Advanced Electronics and Photonics
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Format | Text, Article |
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Subject | lifetime spectroscopy; band gap; time-resolved photoluminescence; semiconductors; photoluminescence |
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Abstract | The combination of time-resolved (TR) and power-dependent relative (PDR) photoluminescence (PL) measurements reveals the possibility of separating the radiative and non-radiative minority carrier lifetimes and measuring the sample-dependent effective radiative recombination coefficient in direct bandgap semiconductors. To demonstrate the method, measurements on 2 μm thick p-type GaAs double-hetero structures were conducted for various doping concentrations in the range of 5x10¹⁶ and 1x10¹⁸ cm⁻³. With a photon recycling factor of 0.76 ± 0.04 the radiative recombination coefficient was determined to be (3.3±0.6)×10⁻¹⁰ cm3s⁻¹ for the structures with a doping concentration below 1*1018 cm⁻³, whereas the effective radiative recombination parameter for an absorber thickness of 2 μm was directly measured to be (0.78±0.07) ×10⁻¹⁰ cm³s⁻¹. For a doping concentration of 1×10¹⁸ cm⁻³, the radiative recombination coefficient decreases significantly probably due to the degeneracy of the semiconductor. |
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Publication date | 2019-04-30 |
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Publisher | AIP |
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Licence | |
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In | |
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Language | English |
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Peer reviewed | Yes |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 5d9fdc7f-2ca3-4f2d-bc32-3c1eca8c0410 |
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Record created | 2020-11-26 |
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Record modified | 2021-02-18 |
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