| DOI | Resolve DOI: https://doi.org/10.1117/12.265364 |
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| Author | Search for: Koteles, Emil S.1; Search for: He, J. J.1; Search for: Charbonneau, S.1; Search for: Poole, P. J.1; Search for: Aers, G. C.1; Search for: Feng, Y.1; Search for: Goldberg, R. D.; Search for: Mitchell, I. V. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Emerging Components and Technologies for All-Optical Photonic Systems II, Nov. 18, 1996, Boston, Massachusetts, United States |
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| Abstract | Polarization insensitive 1.5 micrometer QW optical amplifiers, modulators, and detectors were fabricated using a novel, simple, post-growth, integratable technique. The process utilizes ion-implantation-induced, spatially selective, quantum well (QW) shape modification. A simple model shows that if the interdiffusion rate of the anions is larger than that of the cations, the blue shift in the ground state heavy hole transition energy after implantation and annealing is greater than the light hole state blue shift, merging the two bands and thus eliminating the difference between the TE (transverse electric) and TM (transverse magnetic) waveguide propagation modes. Current- voltage measurements indicate that junction characteristics are well maintained after processing. This simple technique for fabricating discrete polarization insensitive optoelectronic devices is readily extended to the monolithic integration of such devices along with other passive and active optoelectronic devices and provides a pathway to practical photonic integrated circuits. |
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| Publication date | 1997 |
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| Publisher | SPIE |
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| In | |
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| Series | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12339062 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 5e731cdf-badc-46de-9c4e-1098d5567117 |
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| Record created | 2009-09-11 |
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| Record modified | 2023-06-22 |
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