DOI | Resolve DOI: https://doi.org/10.1117/12.2006874 |
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Author | Search for: Scamarcio, G.; Search for: Patimisco, P.; Search for: Santacroce, M. V.; Search for: Tempesta, P.; Search for: Spagnolo, V.; Search for: Vitiello, M. S.; Search for: Dupont, E.1; Search for: Fathololoumi, S.1; Search for: Laframboise, S. R.1; Search for: Razavipour, S. G.; Search for: Wasilewski, Z.; Search for: Ban, D.; Search for: Liu, H. C. |
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Affiliation | - National Research Council of Canada
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Format | Text, Article |
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Conference | Quantum Sensing and Nanophotonic Devices X, February 3-7, 2013, San Francisco, CA, USA |
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Subject | Band-to-band photoluminescence; Electronic distribution; Electronic temperature; Experimental measurements; Lasing conditions; Quantum-cascade devices; Temperature performance; Terahertz quantum-cascade lasers; Cascade connections; Nanophotonics; Photoluminescence; Photoluminescence spectroscopy; Photons; Semiconductor quantum wells; Phonons |
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Abstract | We report on the experimental measurement of active region lattice (T L) and electronic temperatures (T e) in terahertz quantum cascade devices based on the phonon-photon-phonon scheme, by means of microprobe band-to-band photoluminescence spectroscopy. Three mesa devices, differing for doping region and number of quantum wells composing the active region, have been investigated. With device on, under band alignment for lasing condition, we measured a difference (Te - TL) ∼ 40 K much smaller than the typical value (Te - TL ∼ 100 K) reported for resonantphonon THz QCLs. © 2013 SPIE. |
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Publication date | 2013 |
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In | |
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Series | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 21270745 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 6061d98f-423c-4f07-bcb9-c755ada06ffa |
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Record created | 2014-02-17 |
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Record modified | 2020-04-22 |
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