| DOI | Resolve DOI: https://doi.org/10.1002/1521-396X(200112)188:2<715::AID-PSSA715>3.0.CO;2-F |
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| Author | Search for: Tang, H.1; Search for: Bardwell, J. A.1; Search for: Webb, J. B.1; Search for: Rolfe, S.1; Search for: Moisa, S.1; Search for: Fraser, J.1; Search for: Raymond, S.1; Search for: Sikora, P.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | 68.55.Ac; 68.55.Jk; 81.15.Hi; S7.14 |
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| Abstract | The feasibility of selective area growth of GaN by ammonia-MBE has been demonstrated on SiC substrates. Under typical growth conditions for ammonia-MBE, GaN was unable to nucleate on the bare SiC surface. However, GaN nucleation could occur instantly if the SiC surface was first seeded with a thin (300 Å) AlN layer prepared by magnetron sputter epitaxy. Thus, GaN growth could occur selectively from a patterned, pre-deposited thin AlN seed layer, and effectively utilizing the exposed SiC surface as a pseudo mask. Evidence of lateral overgrowth was observed by scanning electron microscopy and X-ray diffraction studies. The selectively grown GaN patterns exhibited a strong tendency to form {10equation image1} or {10equation image2} type of facets with excellent smoothness. |
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| Publication date | 2001-11-23 |
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| Publisher | Wiley |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12328929 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 688d2377-4664-46ac-a155-44be83424840 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-27 |
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