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Optimization of stress-induced pockels effect in silicon waveguides for optical modulators

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/Group4.2013.6644453
AuthorSearch for: ; Search for: 1; Search for: 1; Search for: 1ORCID identifier: https://orcid.org/0000-0003-4232-9130; Search for:
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Conference2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013, 28 August 2013 through 30 August 2013, Seoul
Subjectelectrooptic effects; figure of merits; pockels effect; silicon waveguide; stress-induced; light modulators; modulators; photonics; silicon; strain; waveguides; optimization
Abstract
A method for the optimization of strain-induced Pockels effect in silicon waveguides is proposed. We introduce a new figure of merit and show a 35% enhancement in FOM compared to most efficient reported devices. © 2013 IEEE.
Publication date
In
  • IEEE International Conference on Group IV Photonics GFP, 6644453: 109–110.
LanguageEnglish
Peer reviewedYes
NPARC number21270906
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Record identifier69b7b6be-a329-4770-b0ec-1765ce033b29
Record created2014-02-18
Record modified2020-04-22
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