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Spin- and valley-dependent analysis of the two-dimensional low-density electron system in Si MOSFETs

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1103/PhysRevB.70.035308
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Physical Review. B, Condensed Matter and Materials Physics 70, no. 3 (2004): 035308–.
LanguageEnglish
Peer reviewedYes
NPARC number12744697
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Record identifier69eb316e-3a28-449c-8829-7f663cc9f691
Record created2009-10-27
Record modified2020-04-17
Date modified: