| Download | - View accepted manuscript: Carrier thermal escape in families of InAs/InP self-assembled quantum dots (PDF, 764 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevB.81.235426 |
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| Author | Search for: Gélinas, Guillaume; Search for: Lanacer, Ali; Search for: Leonelli, Richard; Search for: Masut, Remo A.; Search for: Poole, Philip J.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | The temperature evolution of the photoluminescence spectra of two samples of single-layer InAs/InP (001) self-assembled quantum dots is measured from 10 to 300 K. To understand the thermal quenching of their multimodal emission, we develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or nonradiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main escape mechanism of the carriers confined in the quantum dots is through thermal emission to the wetting layer. The activation energy for this process is found to be close to one half the energy difference between that of a given family of quantum dots and that of the wetting layer as measured by photoluminescence excitation experiments. This indicates that electron and holes exit the InAs quantum dots as correlated pairs. |
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| Publication date | 2010-05-24 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 17131327 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 69ef1221-55a3-4b02-83cc-496e5cc0936e |
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| Record created | 2011-03-26 |
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| Record modified | 2020-04-17 |
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