| Download | - View accepted manuscript: Thermal stability and diffusion in gadolinium silicate gate dielectric films (PDF, 529 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1063/1.1412284 |
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| Author | Search for: Landheer, D.1; Search for: Wu, X.1; Search for: Morais, J.; Search for: Baumvol, I. J. R.; Search for: Pezzi, R. P.; Search for: Miotti, L.; Search for: Lennard, W. N.; Search for: Kim, J. K. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Gadolinium silicate films on Si(100) annealed in oxygen and vacuum at temperatures up to 800 °C were analyzed by Rutherford backscattering and narrow resonance nuclear profiling. Oxygen diffused into the film eliminating oxygen vacancies, but Si diffusion, previously observed in Al and Y oxides and in La and Zr silicate films, was absent. Higher-temperature annealing in oxygen resulted in the formation of an interfacial layer observable in high-resolution electron micrographs. Gd0.23Si0.14O0.63 films crystallize at temperatures between 1000 and 1050 °C. These observations combined with recent electrical measurements show that gadolinium silicate films may be a good candidate for the replacement of SiO2 in deep submicron metal–oxide–semiconductor gates. |
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| Publication date | 2001 |
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| In | |
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| Language | English |
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| NPARC number | 12743790 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 6ddd403b-e6c1-483f-a951-6ce626709c51 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-03-27 |
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