Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy
Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy
DOI | Resolve DOI: https://doi.org/10.1088/0268-1242/31/10/105017 |
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Author | Search for: Titova, Lyubov V.; Search for: Cocker, Tyler L.; Search for: Xu, Sijia; Search for: Baribeau, Jean-Marc1; Search for: Wu, Xiaohua1; Search for: Lockwood, David J.2; Search for: Hegmann, Frank A. |
Name affiliation |
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Format | Text, Article |
Journal title | Semiconductor Science and Technology |
ISSN | 0268-1242 1361-6641 |
Volume | 31 |
Issue | 10 |
Pages | 105017-1–105017-8 |
Subject | silicon thin films; terahertz spectroscopy; grain boundaries; low-temperature MBE; carrier dynamics |
Abstract | |
Publication date | 2016-09-22 |
Publisher | IOP : Institute of Physics |
Language | English |
Peer reviewed | Yes |
NPARC number | 23000872 |
Export citation | Export as RIS |
Report a correction | Report a correction | Record identifier | 6f64c874-c522-481f-a5d1-f0a597fd5e33 |
Record created | 2016-10-31 |
Record modified | 2020-03-16 |