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Determining strain, chemical composition, and thermal properties of Si/SiGe nanostructures via raman scattering spectroscopy

From National Research Council Canada

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DOIResolve DOI: https://doi.org/10.1149/osf.io/68puc
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Affiliation
  1. National Research Council of Canada. Advanced Electronics and Photonics
  2. National Research Council of Canada. Measurement Science and Standards
FormatText, Article
Physical description15 p.
Abstract
Studies by Raman spectroscopy of two kinds of Si/SiGe nanostructures—quantum dot multilayers and planar superlattices—reveal a wide variety of spectral features including first- and second-order Raman scattering, polarized Raman scattering, and low-frequency inelastic light scattering associated with folded acoustic phonons. Here we overview how such features can be employed to semi-quantitatively analyze the strain, chemical composition, and thermal conductivity in these industrially important materials that are widely used for producing electronic and optoelectronic devices.
Publication date
PublisherECSarXiv
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  • ECSarXiv Preprints.
LanguageEnglish
Peer reviewedNo
NPARC number23004216
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Record identifier76071b9f-bc78-477a-9036-2852a33a9f28
Record created2018-10-12
Record modified2020-05-30
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