| DOI | Resolve DOI: https://doi.org/10.1109/3.341704 |
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| Author | Search for: Ma, T.-A.; Search for: Li, Z.-M.1; Search for: Makino, T.; Search for: Wartak, M. S. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | 1.55 mum; 1.55-?; anisotropic effective mass theory; approximate optical gain formulas; approximation theory; carrier concentration; carrier density; efficient analytical model; emission wavelength; empirical formulas; gallium arsenide; gallium compounds; III-V semiconductors; In1-xGaxAsyP1-y; indium compounds; infrared sources; InGaAsP-InP; InGaAsP-InP material system; laser theory; logarithmic relation; m strained quaternary quantum-well lasers; material compositions; optical gain; peak optical gain; quantum well lasers; quaternary strained quantum-well lasers; semiconductor device models; semiconductor quantum wells; strained quantum-well laser; well width |
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| Abstract | We have used an efficient analytical model to calculate the optical gain of the strained quantum-well laser of InGaAsP-InP material system. Based on the anisotropic effective mass theory, empirical formulas delineating the relations between optical gain, emission wavelength, well width and material compositions are obtained for 1.55-?m In1-xGaxAsyP1-y quaternary strained quantum-well lasers. Results show a logarithmic relation between the peak optical gain and carrier concentration for all possible material compositions of the quaternary system. We show that the logarithmic relation can be derived algebraically |
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| Publication date | 1995 |
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| In | |
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| Language | English |
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| NPARC number | 12333622 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 77205fd7-690f-4197-a3e1-7032f5853efc |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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