DOI | Resolve DOI: https://doi.org/10.1557/PROC-318-129 |
---|
Author | Search for: Das, Suhit R.1; Search for: Xu, D-X.1; Search for: Phillips, J.1; Search for: McCaffrey, J.1; Search for: LeBrun, L.1; Search for: Naem, A. |
---|
Name affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
|
---|
Format | Text, Article |
---|
Conference | 1993 MRS Fall Meeting, Symposium Ca: Interface Control of Electrical, Chemical, and Mechanical Properties, November 29 - December 3, 1993, Boston, Massachusetts, U.S.A. |
---|
Abstract | PtSi/Si interfaces have been formed by depositing Pt layers on chemically cleaned, lightly doped, n-type Si (100) wafers in a UHV magnetron sputter-deposition system using ultra high purity Ar as the sputter gas, followed by ex-situ silicidation in N2 ambient utilizing a 3-step rapid thermal annealing (RTA) process. The polycrystalline PtSi layer, with oriented grains ranging in size from 50-100 nm, exhibits a columnar growth morphology. The PtSi/Si interface is planar with interface roughness in the order of 5 nm peak-to-peak. Auger depth profile shows uniform composition through the PtSi layer and a clean and chemically abrupt PtSi/Si interface. |
---|
Publication date | 1993 |
---|
In | |
---|
Series | |
---|
Language | English |
---|
Peer reviewed | Yes |
---|
NPARC number | 21276804 |
---|
Export citation | Export as RIS |
---|
Report a correction | Report a correction (opens in a new tab) |
---|
Record identifier | 7a06ff56-bb9e-44b7-a91d-2082550fee74 |
---|
Record created | 2015-10-20 |
---|
Record modified | 2020-04-24 |
---|