Structural characterization of partially relaxed InAlSb epitaxial epilayers grown on InSb substrates
Structural characterization of partially relaxed InAlSb epitaxial epilayers grown on InSb substrates
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Format | Text, Article |
Conference | 22nd International Conference on the Physics of Semiconductors, Vancouver, B.C., Canada, August 15-19, 1994 |
Publication date | 1995 |
In | |
Language | English |
NPARC number | 12338847 |
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Record identifier | 7f98c8cc-f2bc-4115-9022-942805c8e1c2 |
Record created | 2009-09-11 |
Record modified | 2020-04-29 |
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