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Structural characterization of partially relaxed InAlSb epitaxial epilayers grown on InSb substrates

From National Research Council Canada

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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Conference22nd International Conference on the Physics of Semiconductors, Vancouver, B.C., Canada, August 15-19, 1994
Publication date
In
  • 22nd International Conference on the Physics of Semiconductors 2 (1995): 1516–.
LanguageEnglish
NPARC number12338847
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Record identifier7f98c8cc-f2bc-4115-9022-942805c8e1c2
Record created2009-09-11
Record modified2020-04-29
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