| Download | - View accepted manuscript: Characterization of gadolinium and lanthanum oxide films on Si (100) (PDF, 904 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1116/1.1463079 |
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| Author | Search for: Wu, X.1; Search for: Landheer, D.1; Search for: Sproule, G. I.1; Search for: Quance, T.1; Search for: Graham, M. J.1; Search for: Botton, G. A. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Lanthanum; Gadolinium; Thin films; Annealing; Thin film structure |
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| Abstract | High-resolution transmission electron microscopy, electron energy loss spectroscopy, and Auger electron spectroscopy, were used to study gadolinium and lanthanum oxide films deposited on Si (100) substrates using electron-beam evaporation from pressed-powder targets. As-deposited films consist of a crystalline oxide layer and an amorphous interfacial layer. A complicated distinct multilayer structure consisting of oxide layers, silicate layers, and SiO2-rich layers in thick (∼30 nm) annealed films has been observed for both gadolinium and lanthanum films. For thinner annealed films (∼8 nm), there is no longer a crystalline oxide layer but an amorphous gadolinium or lanthanum silicate layer and an interfacial SiO2-rich layer. The formation of the lanthanum silicate by annealing lanthanum oxide is found to be thermodynamically more favorable than the formation of gadolinium silicate. |
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| Publication date | 2002 |
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| In | |
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| Language | English |
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| NPARC number | 12744506 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 833fd7d1-cd1b-4d77-9445-625a8a22d512 |
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| Record created | 2009-10-27 |
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| Record modified | 2020-03-30 |
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