| Abstract | Copper films have been deposited by low-pressure (1–20 mTorr) chemical vapour deposition using Cu1+ (hexafluoroacetylacetonate) trimethylvinylsilane onto SiO2 patterned substrates having seed layers of W, TiN and Al. Blanket deposition is observed for all growth temperatures in the range 140 °C ≤ Tg ≤ 240 °C. However, depending on the initial substrate seed layer and pre-treatment, the relative strength of the copper-oxide and copper-seed layer bond can be dramatically altered particularly when growth is carried out in the presence of dichloromethylsilane (DCDMS). The degree of selectivity as well as film morphology is also found to be sensitive to the initial pre-treatment, growth temperature and flow rate of DCDMS. |
|---|
