| DOI | Resolve DOI: https://doi.org/10.1016/0039-6028(96)00532-8 |
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| Author | Search for: Fafard, S.1; Search for: Raymond, S.1; Search for: Wang, G.; Search for: Leon, R.; Search for: Leonard, D.; Search for: Charbonneau, S.1; Search for: Merz, J. L.; Search for: Petroff, P. M.; Search for: Bowers, J. E. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 11th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS XI), Nottingham, UK, August 7-11, 1995 |
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| Subject | gallium arsenide; indium arsenide; molecular beam epitaxy; photoluminescence; quantum effects; quantum wells; self-assembly; surface tension |
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| Abstract | Several ensembles of self-assembled quantum dots (QDs) based on the AlInAsAl/GaAs and InGaAs/GaAs material systems have been investigated using photoluminescence (PL), PL excitation (PLE) and time-resolved PL (TRPL). The influence of the temperature is measured by monitoring sharp spectral features (as narrow as 90 μeV) obtained when probing the PL of small QD ensembles (few hundreds QDs). Thermionic emission of the photocarriers out of the QD potential is found to be the dominant mechanism leading to the thermal quenching of the PL and temperature-independent linewidths are observed up to the onset of the PL quenching. |
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| Publication date | 1996-07-20 |
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| Language | English |
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| NPARC number | 12328785 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 88d1c8ee-2ea6-4a8b-a52f-f9035233112b |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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