Electron-beam-controlled transmission of 10-μm radiation in semiconductors

DOI	Resolve DOI: https://doi.org/10.1063/1.326386
Author	Search for: Corkum, P.B.¹; Search for: Alcock, A.J.¹; Search for: Leopold, K.E.¹
Name affiliation	National Research Council of Canada
Format	Text, Article
Subject	Electron beams - Applications; Infrared radiation - Transmission; Lasers, carbon dioxide - Fusion Applications; Semiconductor materials
Abstract	An electron beam has been used to control the transmission of 10.6-μm radiation in Ge, ZnSe, and CdTe samples. With an ∼2.5-A/cm2 20-ns pulse of ∼110-keV electrons incident on the semiconductor, the transmission falls abruptly, recovering in approximately the recombination time of the semiconductor. Carrier-absorption cross sections at 10.6 μm have been determined for CdTe and ZnSe. Semiconductor transmission switching provides a broad-bandwidth active isolator which may find applications in high-gain CO 2 laser systems.
Publication date	1979
In	Journal of Applied Physics 50, no. 5 (1979): 3079–3082.
Language	English
Peer reviewed	Yes
NPARC number	21276158
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Record identifier	8b48fd5c-a97e-4796-ae88-95b5601a51e7
Record created	2015-09-28
Record modified	2020-03-13