Electron-beam-controlled transmission of 10-μm radiation in semiconductors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.326386
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Name affiliation
  1. National Research Council of Canada
FormatText, Article
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume50
Issue5
Pages3079–3082
SubjectElectron beams - Applications; Infrared radiation - Transmission; Lasers, carbon dioxide - Fusion Applications; Semiconductor materials
Abstract
An electron beam has been used to control the transmission of 10.6-μm radiation in Ge, ZnSe, and CdTe samples. With an ∼2.5-A/cm2 20-ns pulse of ∼110-keV electrons incident on the semiconductor, the transmission falls abruptly, recovering in approximately the recombination time of the semiconductor. Carrier-absorption cross sections at 10.6 μm have been determined for CdTe and ZnSe. Semiconductor transmission switching provides a broad-bandwidth active isolator which may find applications in high-gain CO 2 laser systems.
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LanguageEnglish
Peer reviewedYes
NPARC number21276158
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