| DOI | Resolve DOI: https://doi.org/10.1063/1.326386 |
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| Author | Search for: Corkum, P.B.1 ; Search for: Alcock, A.J.1 ; Search for: Leopold, K.E.1 |
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| Name affiliation | - National Research Council Canada
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| Format | Text |
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| Type | Article |
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| Journal title | Journal of Applied Physics |
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| ISSN | 0021-8979 |
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| Volume | 50 |
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| Issue | 5 |
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| Pages | 3079–3082; # of pages: 4 |
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| Subject | Electron beams - Applications; Infrared radiation - Transmission; Lasers, carbon dioxide - Fusion Applications; Semiconductor materials |
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| Abstract | An electron beam has been used to control the transmission of 10.6-μm radiation in Ge, ZnSe, and CdTe samples. With an ∼2.5-A/cm2 20-ns pulse of ∼110-keV electrons incident on the semiconductor, the transmission falls abruptly, recovering in approximately the recombination time of the semiconductor. Carrier-absorption cross sections at 10.6 μm have been determined for CdTe and ZnSe. Semiconductor transmission switching provides a broad-bandwidth active isolator which may find applications in high-gain CO 2 laser systems. |
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| Publication date | 1979 |
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| Terms of use | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21276158 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction |
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Record identifier | 8b48fd5c-a97e-4796-ae88-95b5601a51e7 | | Record created | 2015-09-28 |
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| Record modified | 2016-05-09 |
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