DOI | Resolve DOI: https://doi.org/10.1109/NMDC.2009.5167529 |
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Author | Search for: Perera, A. G. Unil; Search for: Jayasinghe, Ranga C.; Search for: Ariyawansa, Gamini; Search for: Dietz, Nikolaus; Search for: Matsik, Steven G.; Search for: Ferguson, Ian T.; Search for: Liu, Hui Chun1 |
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Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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Format | Text, Article |
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Conference | 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC), June 2-5, 2009, Traverse City, MI, USA |
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Abstract | Ultraviolet and infrared (UV/IR) dual-band photodetectors based on GaN/AlGaN heterojunction structures are presented. Since the UV/IR dual-band detectors do not respond to solar radiation or another artificial visible lighting, these detectors are highly applicable for tracking and surveillance of targets. A dual-band detector which simultaneously detects UV in the 250 - 360 nm and IR in the 3 - 14 mum regions, showing a near zero spectral crosstalk between the two spectral bands, is discussed. A UV/IR detector design to further improve the detection capabilities is also reported. |
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Publication date | 2009-07-21 |
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Publisher | IEEE |
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In | |
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Language | English |
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Peer reviewed | Yes |
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NPARC number | 23004925 |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 8b762228-fec4-4e7d-90d9-6339e109f5b3 |
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Record created | 2019-01-21 |
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Record modified | 2020-04-16 |
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