Comparison of Ion Implantation Aroaches in the Fabrication of AlGaN/GaN HFETs: Classical vs Through the Gate Metal

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  1. National Research Council Canada. NRC Steacie Institute for Molecular Sciences
FormatText
TypeArticle
ConferenceIPAP Conference Series 1, 2000, Tokyo
Volume931
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NPARC number5212406
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Record identifier8c5fb574-c501-447c-8880-fa21421e2fd8
Record created2008-12-02
Record modified2019-03-14
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