| Download | - View accepted manuscript: Selective epitaxy of semiconductor nanopyramids for nanophotonics (PDF, 2.4 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1088/0957-4484/21/29/295302 |
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| Author | Search for: Poole, P. J.1; Search for: Dalacu, D.1; Search for: Lefebvre, J.1; Search for: Williams, R. L.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We present a detailed study of the parameters which affect the geometrical perfection of nanopyramids used for the site-selected nucleation of quantum dots. Through an understanding of crystal facet formation, we demonstrate that undesirable high index planes can be suppressed using carefully optimized lithography together with properly orientated source fluxes in the growth reactor. High quality InP nanopyramids are reported with individual InAs/InP quantum dots positioned with high precision. This represents an important milestone for the fabrication of complex quantum dot based nanophotonic devices. |
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| Publication date | 2010-06-29 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 17326695 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8e0bbb9b-88c2-4360-b995-915137635cf6 |
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| Record created | 2011-03-26 |
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| Record modified | 2020-04-17 |
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