| DOI | Resolve DOI: https://doi.org/10.1109/ICMENS.2004.1509004 |
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| Author | Search for: Grant, P. D.1; Search for: Denhoff, M. W.1; Search for: Mansour, R. R. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | The 2004 International Conference on MEMS, NANO and Smart Systems, ICMENS 2004, August 25-27, 2014, Banff, Alberta, Canada |
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| Subject | radiofrequency microelectromechanical systems; switches; radio frequency; capacitance; insertion loss; transmission lines; performance analysis; performance loss; MESFETs; P-i-n diodes |
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| Abstract | This paper addresses the fundamentals of RF switches providing a comparison between semiconductor and RF MEMS switches. The basis of comparison is introduced by defining a figure of merit that is a function of the off-state capacitance and the on-state resistance. A simple transmission line model is presented to illustrate the impact of the switch off-state capacitance on the switch isolation and frequency range of operation. The figure of merit analysis given in this paper demonstrates that RF MEMS switches have superior insertion loss and isolation performance in comparison to MESFET and p-i-n diode switches. The paper also addresses several other design considerations beside insertion loss and isolation for selecting the right RF switch. A discussion is given on the potential use of RF MEMS switches in satellite and wireless applications. |
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| Publication date | 2004-08-25 |
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| Publisher | IEEE |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12346738 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8e3d2f0d-f0de-4d4a-979d-09222752c8ef |
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| Record created | 2009-09-17 |
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| Record modified | 2023-11-07 |
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