| DOI | Resolve DOI: https://doi.org/10.1109/GROUP4.2006.1708170 |
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| Author | Search for: Lockwood, D. J.1; Search for: Wu, X.1; Search for: Baribeau, J.-M.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 3rd IEEE International Conference on Group IV Photonics, 13-15 September 2006 |
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| Abstract | In this paper, the study of alloy composition on SiGe island growth by MBE under similar conditions has shown that the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher |
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| Publication date | 2006 |
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| In | |
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| Language | English |
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| NPARC number | 12346234 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8e439a3d-000b-4b95-b15c-7cddc41a1aa3 |
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| Record created | 2009-09-17 |
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| Record modified | 2020-04-22 |
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