Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

From National Research Council Canada

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DOIResolve DOI: https://doi.org/10.1088/1367-2630/17/7/073023
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Affiliation
  1. National Research Council of Canada. National Institute for Nanotechnology
FormatText, Article
SubjectSTM; scanning tunneling spectroscopy; silicon dangling bond; charge state transition; silicon atomic quantum dot
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LanguageEnglish
Peer reviewedYes
NPARC number21276129
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Record identifier91489134-57e6-406a-8e37-3daf84adbedd
Record created2015-09-25
Record modified2024-02-01
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