| Download | - View accepted manuscript: Role of buried cracks in mitigating strain in crack free GaN grown on Si(111) employing AlN interlayer schemes (PDF, 837 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1016/j.jcrysgro.2010.11.063 |
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| Author | Search for: Tang, H.1; Search for: Baribeau, J. -M.1; Search for: Aers, G. C.1; Search for: Fraser, J.1; Search for: Rolfe, S.1; Search for: Bardwell, J. A.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Proceedings of the 16th International Conference on Molecular Beam Epitaxy (ICMBE), August 22–27, 2010, Berlin, Germany |
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| Subject | molecular beam epitaxy; gallium nitride; strain relaxation; buried cracks |
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| Abstract | This paper investigates the effect of buried cracks in the AlN interlayer buffer on mitigation of the large, tensile, thermal expansion mismatch strain in the GaN/Si system, which is a key hurdle for achieving crack free GaN epitaxy on silicon. The thermally induced strain is determined by temperature-dependent, high-resolution X-ray diffraction measurements carried out from room temperature up to the growth temperature. It is found that in addition to the balancing effect of compressive lattice-mismatch strain induced by the AlN interlayers, buried cracks in the AlN interlayer region can also relax some of the thermal expansion mismatch strain through elastic distortion at crack edges. The degree of relaxation is dependent on the spacing-to-height aspect ratio of the buried cracks, consistent with prediction of crack-edge-induced relaxation models. |
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| Publication date | 2010-11-18 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 19542541 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 93018b5f-b20c-4bd9-9e03-e08c1524c7b2 |
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| Record created | 2012-02-29 |
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| Record modified | 2020-04-17 |
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