| Download | - View accepted manuscript: Time resolved single dopant charge dynamics in silicon (PDF, 526 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1038/ncomms13258 |
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| Author | Search for: Rashidi, Mohammad1; Search for: Burgess, Jacob; Search for: Taucer, Marco2; Search for: Achal, Roshan; Search for: Pitters, Jason L.1; Search for: Loth, Sebastian; Search for: Wolkow, Robert A. |
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| Affiliation | - National Research Council of Canada. National Institute for Nanotechnology
- National Research Council of Canada. Security and Disruptive Technologies
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| Format | Text, Article |
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| Abstract | As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into function and limitations of conventional devices, such information enables identification of new device concepts. Atomically resolved, electronic pump-probe scanning tunneling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunneling through the surface dangling bond makes feasible what would otherwise be too weak a signal to observe. We introduce a time-resolved scanning-tunneling-spectroscopy method whereby current measurements are made before the system of study relaxes or adjusts to accommodate an applied field. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified. |
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| Publication date | 2015-12 |
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| Publisher | Nature |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21277127 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 974ae38e-1d43-488e-bd23-069b92ec266c |
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| Record created | 2015-12-07 |
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| Record modified | 2020-06-09 |
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