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Characterization and modeling of AlGaN/GaN heterostructure field effect transistors for low noise amplifiers

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.2186659
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Journal of Vacuum Science & Technology A 24, no. 3 (2006): 629–633.
NPARC number12744225
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Record identifier982d737c-cebd-4cf6-a74c-481389832ce4
Record created2009-10-27
Record modified2020-04-22
Date modified: