Language selection

Government of Canada / Gouvernement du Canada

Search

Characterization and modeling of AlGaN/GaN heterostructure field effect transistors for low noise amplifiers

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.2186659
AuthorSearch for: ; Search for: ; Search for: 1; Search for: ; Search for: 1; Search for: 1; Search for: 1
Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Journal of Vacuum Science & Technology A 24, no. 3 (2006): 629–633.
NPARC number12744225
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier982d737c-cebd-4cf6-a74c-481389832ce4
Record created2009-10-27
Record modified2020-04-22
Date modified: