| Download | - View accepted manuscript: Surface dipole layer potential induced IR absorption enhancement in n-alkanethiol SAMs on GaAs(001) (PDF, 933 KiB)
|
|---|
| DOI | Resolve DOI: https://doi.org/10.1021/1a901888q |
|---|
| Author | Search for: Marshall, Gregory M.1; Search for: Lopinski, Gregory P.2; Search for: Bensebaa, Farid1; Search for: Dubowski, Jan J. |
|---|
| Affiliation | - National Research Council of Canada. NRC Institute for Chemical Process and Environmental Technology
- National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
|
|---|
| Format | Text, Article |
|---|
| Abstract | The work function of n-alkanethiol self-assembledmonolayers (SAMs) prepared on theGaAs(001) surface was measured using the Kelvin probe technique yielding the SAM 2D dipole layer potential (DLP). Direct n-dependent proportionality between the DLP values and the C-H stretching mode infrared (IR) absorption intensities was observed, which supports a correspondence of reported IR enhancements with the electrostatic properties of the interface. X-ray photoelectron spectroscopy is also used to verify the work function measurements. In addition, the principal components of the refractive index tensor are shown to be n-invariant in the ordered SAM phase. Our results suggest that a local field correction to the transition dipolemoment accounts for the observed increase in IRactivity through an increase to the electronic polarizability. |
|---|
| Publication date | 2009-10-29 |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| NRC number | NRCC 52013 |
|---|
| NPARC number | 15329273 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 988f7768-35aa-40ab-852d-5cce55c5b2f5 |
|---|
| Record created | 2010-05-19 |
|---|
| Record modified | 2020-04-16 |
|---|
