| Download | - View accepted manuscript: High contrast ratio, high uniformity multiple quantum well spatial light modulators (PDF, 877 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1088/1674-4926/31/3/034007 |
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| Author | Search for: Yuyang, Huang; Search for: Liu, H. C.1; Search for: Wasilewski, Z. R.1; Search for: Buchanan, M.1; Search for: Laframboise, S. R.1; Search for: Yang, Chen; Search for: Cui, Guoxin; Search for: Bian, Lifeng; Search for: Yang, Hui; Search for: Yaohui, Zhang |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | spatial light modulator; multiple quantum well; uniformity; contrast ratio; adjust layer; matching condition |
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| Abstract | Our latest research results on GaAs–AlGaAs multiple quantum well spatial light modulators are presented. The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. A contrast ratio (CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer. Both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high CR. |
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| Publication date | 2010-03-01 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 17400953 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 995794f8-43cc-4abc-93d4-3193513cd6cb |
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| Record created | 2011-03-26 |
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| Record modified | 2020-04-17 |
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