| DOI | Resolve DOI: https://doi.org/10.1038/srep04903 |
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| Author | Search for: Korkusinski, M.1; Search for: Hawrylak, P.1 |
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| Affiliation | - National Research Council of Canada. Security and Disruptive Technologies
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| Format | Text, Article |
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| Abstract | We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum dot, tunable by adjusting the number of conduction channels in the source-drain voltage window. The electronic properties of a HgTe quantum dot as a function of size and applied strain are described using eight-band k·p Luttinger and Bir-Pikus Hamiltonians, with surface states identified with chirality of Luttinger spinors and obtained through extensive numerical diagonalization of the Hamiltonian. |
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| Publication date | 2014 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21272288 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 9cd8ccf3-02a0-407e-a53e-362bbe1227af |
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| Record created | 2014-07-23 |
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| Record modified | 2020-04-22 |
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