| DOI | Resolve DOI: https://doi.org/10.1109/ISLC.1994.519174 |
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| Author | Search for: Fallahi, M.1; Search for: Chatenoud, F.1; Search for: Dion, M.1; Search for: Templeton, I. M.1; Search for: Barber, R.1; Search for: Thompson, J.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Semiconductor Laser Conference, 1994., 14th IEEE International, September 19-23, 1994, Maui, Hawaii, United States |
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| Subject | 0.98 mum; 100 mW; 11 percent; 298 K; circular-grating surface-emitting distributed Bragg reflector laser; CW operation; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; gradient index optics; indium compounds; InGaAs/GaAs structure; InGaAs-GaAs; laser cavity resonators; pulsed external efficiency; quantum well lasers; room temperature; surface emitting lasers; surface-emission DBR lasers |
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| Abstract | InGaAs/GaAs circular-grating surface-emission DBR lasers with a pulsed external efficiency, over 11% (power>100 mW) and a divergence of 1° are obtained. We also demonstrate the first CW operation near room temperature |
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| Language | English |
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| NPARC number | 12337700 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 9d6ce67b-b390-4721-98a8-e58032b96dc9 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-16 |
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