| DOI | Resolve DOI: https://doi.org/10.1063/1.119599 |
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| Author | Search for: Przadka, A.; Search for: Webb, K.; Search for: Janes, D.; Search for: Liu, H.; Search for: Wasilewski, Zbigniew1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | aluminium compounds; gallium arsenide; high-frequency effects; III-V semiconductors; interface states; resonant tunnelling diodes; semiconductor device noise; semiconductor quantum wells; shot noise |
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| Abstract | The room temperature shot noise of a resonant tunneling diode was determined from microwave measurements as a function of bias. An AlAs/GaAs structure with multiple quasibound well states and asymmetric barrier thicknesses was investigated over a bias regime exceeding the first resonance. In contrast to results for single well state devices, significant noise suppression below the classical limit was also observed for bias ranges beyond the first resonance level. This suppression can be explained by competition between the first and second resonance levels for the thick barrier on the emitter side and due to predominately single barrier tunneling in the reverse polarity. |
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| Publication date | 1997-07-28 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12328976 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | a4e81461-8354-488c-b133-9a82ed469f85 |
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| Record created | 2009-09-10 |
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| Record modified | 2023-05-10 |
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