AlGaN/GaN HFET devices on SiC grown by ammonia–MBE with high fT and fMAX

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1049/el:20030354
AuthorSearch for: 1; Search for: ; Search for: 1; Search for: 2; Search for: 1; Search for:
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
  2. National Research Council of Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
NPARC number12744871
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifiera5298b7d-eabb-4c33-be56-2079291dae09
Record created2009-10-27
Record modified2020-04-02
Date modified: