| DOI | Resolve DOI: https://doi.org/10.1557/PROC-355-9 |
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| Author | Search for: Baribeau, J. -M1; Search for: Lockwood, D.J.1; Search for: Headrick, R.L. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 1994 MRS Fall Meeting: Symposium B1: Evolution of Thin-Film and Surface Structure and Morphology, November 28-December 2, 1994, Boston, Massachusetts, U.S.A. |
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| Abstract | The interfaces in Si0.65Ge0.35/Si superlattices grown at different temperatures (250–750 °C) and number of repetitions (5, 10, 20) are studied by x-ray and Raman scattering techniques. At 250 °C the interfaces are chemically abrupt, but exhibit a pronounced vertically correlated physical roughness that increases in magnitude with thickness. In the range of 400–550 °C interfaces are smooth but intermixed over at least two monolayers, and asymmetrically broadened with the alloy/Si interfaces width about twice (0.25 vs 0.5 nm) that of the Si/alloy interfaces. At higher temperatures (620–750 °C) undulations of 1 nm amplitude and 100 nm length scale develop at the alloy/Si interfaces. This morphological change appears to be strain-driven and causes some relaxation of the built-in strain. Moderate annealing (20 s at 750 °C) induces partial relaxation of the superlattices and out-diffusion (∼0.5 nm) of Ge into the contiguous Si layers, but has relatively little effect on the interfacial widths. |
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| Publication date | 1995 |
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| Language | English |
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| NPARC number | 12328540 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | a79d3029-4568-488f-8b41-71dc9c1ab87f |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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