| DOI | Resolve DOI: https://doi.org/10.1063/1.369062 |
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| Author | Search for: Liu, H.; Search for: Szmulowicz, F.; Search for: Wasilewski, Zbigniew1; Search for: Buchanan, Margaret1; Search for: Brown, G. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | aluminium compounds; gallium arsenide; III-V semiconductors; infrared detectors; infrared spectra; light polarisation; quantum well devices; semiconductor quantum wells; valence bands |
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| Abstract | We present results on a p-type intersubband infrared detector for the 3–5 µm wavelength region with optimal quantum well design. For valence band quantum wells made by the AlGaAs/GaAs heterosystem with negligible strain, the ground state subband is the first heavy hole subband, and a structure with the second light hole subband in resonance with the top of the barrier is optimal for normal incidence. Using this resonance design, the fabricated detector shows good performance with a background limited operating temperature of 100 K. Our experiments also show a clear polarization dependence for different intersubband transitions involving heavy hole to heavy hole and heavy hole to light hole processes. |
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| Publication date | 1999-03-01 |
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| In | |
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| NPARC number | 12327201 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | ac97121e-3b27-428b-bbab-b9a045f6bacd |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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