| DOI | Resolve DOI: https://doi.org/10.1364/OL.383757 |
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| Author | Search for: González-Andrade, DavidORCID identifier: https://orcid.org/0000-0003-4402-877X; Search for: Guerber, Sylvain; Search for: Durán-Valdeiglesias, Elena; Search for: Pérez-Galacho, Diego; Search for: Le Roux, Xavier; Search for: Vulliet, Nathalie; Search for: Cremer, Sébastien; Search for: Monfray, Stephane; Search for: Cassan, Eric; Search for: Marris-Morini, Delphine; Search for: Boeuf, Frédéric; Search for: Cheben, Pavel1ORCID identifier: https://orcid.org/0000-0003-4232-9130; Search for: Vivien, Laurent; Search for: Velasco, Aitor V.; Search for: Alonso-Ramos, Carlos |
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| Affiliation | - National Research Council of Canada. Advanced Electronics and Photonics
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| Format | Text, Article |
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| Abstract | Silicon nitride (SiN) waveguides provide a substantially lower index contrast, thermo-optic coefficient, and reduced birefringence compared to silicon-on-insulator waveguides. These properties make SiN a prominent candidate for implementation of ultra-wideband dual-polarization photonics circuits with a great potential for datacom applications. State-of-the-art SiN power splitters are still hampered in terms of either bandwidth or single-polarization operation. Here, we propose to overcome these limitations by exploiting modal and waveguide symmetry engineering in a single-mode slot waveguide. This topology prevents mode-beating, while granting symmetric power splitting for both polarizations. Experimental characterization of the fabricated device shows low loss (<0.62 dB) and imbalance (<0.6 dB) within an unprecedented bandwidth of 420 nm (1.26–1.68 µm). |
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| Publication date | 2019-12-17 |
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| Publisher | OSA Publishing |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | acb33dd6-0762-46ec-92e9-257c47600078 |
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| Record created | 2020-07-09 |
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| Record modified | 2021-09-17 |
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