Chiral selective tunneling induced negative differential resistance in zigzag graphene nanoribbon: a theoretical study

Alternative title	Nature of negative differential resistance in zigzag graphene nanoribbon: chiral selective tunneling rule
DOI	Resolve DOI: https://doi.org/10.1063/1.2904701
Author	Search for: Wang, Z. F.; Search for: Qunxiang, Li; Search for: Shi, Q. W.; Search for: Wang, Xiaoping; Search for: Yang, Jinlong; Search for: Hou, J. G.; Search for: Chen, Jie¹
Affiliation	National Research Council of Canada. Nanotechnology
Format	Text, Article
Abstract	The electronic and phase-coherent transport properties of a doped zigzag graphene nanoribbon are studied theoretically in this paper. The I-V curve of the device shows an interesting negative differential resistance (NDR) phenomenon. We found that the NDR is caused by the chiral tunneling of graphene, which is attributed to the symmetry of the eigenstates of individual subbands. This new physics finding is helpful for us to gain more insights about carrier transport in graphene nanoribbons and to design graphene-based nanoelectronic devices.
Publication date	2008-04-02
Publisher	AIP
In	Applied Physics Letter 92, no. 13, 133114.
Peer reviewed	Yes
NRC number	496 NRC-NINT-496
NPARC number	8926225
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Record identifier	acf3deac-cff7-403f-864a-c4e3764dc6f1
Record created	2009-04-23
Record modified	2020-04-15