| DOI | Resolve DOI: https://doi.org/10.1006/spmi.1994.1075 |
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| Author | Search for: Piva, P. G.1; Search for: Poole, P. J.1; Search for: Charbonneau, S.1; Search for: Koteles, E. S.1; Search for: Buchanan, M.1; Search for: Aers, G.1; Search for: Roth, A. P.1; Search for: Wasilewski, Z. R.1; Search for: Beauvals, J.; Search for: Goldberg, R. D. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated at low energy (32 and 100 keV respectively) in three different material systems (GaAs/AlGaAs, InGaAs/GaAs, and lattice matched InGaAs/InP). Repeated sequential ion implants and rapid thermal anneals (RTAs) were successful in delivering several times the maximum QW bandgap shift achievable by a single implant/RTA cycle. The effectiveness of broad area high energy implantation (8 MeV As4+) on QW intermixing was also established for GRINSCH (graded-index separate confinement heterostructure) QW laser structures grown in InGaAs/GaAs. Lastly, preliminary work illustrating the effects of implant temperature and ion current density was carried out for InGaAs/GaAsQWs. |
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| Publication date | 1994 |
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| In | |
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| Language | English |
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| NPARC number | 12338044 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | b2ec9550-c628-4d03-9a50-f8308e29bc0f |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-27 |
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