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Low frequency noise in CdSe thin-film transistors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/ESSDERC.2000.194847
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Conference30th European Solid-State Device Research Conference (ESSDERC 2000), 11-13 September 2000, Cork, Ireland
Abstract
Low frequency noise in CdSe thin-film transistors (TFTs) has been studied, for the first time, over a wide range of gate and drain biases, temperatures and gate areas. The dependencies of the noise on the gate voltage and the gate length indicate that the 1/f noise originates from the bulk sources homogeneously distributed in the channel. The value of Hooge parameter α lies within the usual range 10–3 α 2 < 10 < –2 for Si TFTs and amorphous Si. The absence of the illumination effect on the relative noise spectra of drain current fluctuations reveals that the nature of the 1/f noise in CdSe is probably different from that in Si and GaAs.
Publication date
In
  • Solid-State Device Research Conference, 2000. Proceeding of the 30th European (2000): 592–595.
LanguageEnglish
NPARC number12346772
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Record identifierb48594c0-52d7-4938-a9c1-14284adb1ca2
Record created2009-09-17
Record modified2020-03-26
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