| DOI | Resolve DOI: https://doi.org/10.1021/nl400820w |
|---|
| Author | Search for: Dalacu, D.1; Search for: Kam, A.1; Search for: Austing, D.G.1; Search for: Poole, P.J.1 |
|---|
| Affiliation | - National Research Council of Canada
|
|---|
| Format | Text, Article |
|---|
| Subject | Catalyst particles; Complex sequences; Design structure; Nanophotonic devices; Selective-area epitaxy; Semiconductor nanowire; Vapor-liquid-solid epitaxies; VLS; Coalescence; Drops; Epitaxial growth; Nanophotonics; Semiconductor devices; Nanowires |
|---|
| Abstract | Semiconductor nanowires offer a versatile platform for the fabrication of new nanoelectronic and nanophotonic devices. These devices will require a high level of control of the nanowire position in relation to both other components of the device and to other nanowires. We demonstrate unprecedented control of the position of InAs nanowires using selective-area vapor-liquid-solid epitaxy (VLS) on an InP ridge template. The high level of control allows us to design structures which connect individual nanowires through coalescence of their catalyst particles. The interconnection process acts as a perturbation to the geometry of the nanowire system that can contribute to the understanding of droplet dynamics in VLS growth. Postgrowth imaging reveals a complex sequence of droplet configurations, including predicted geometries that have not previously been observed. © Published 2013 by the American Chemical Society. |
|---|
| Publication date | 2013 |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| NPARC number | 21270688 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | b8a247fb-1ca0-467c-88f4-2d8ee02bdcbd |
|---|
| Record created | 2014-02-17 |
|---|
| Record modified | 2020-04-22 |
|---|
