RF passive devices on Si with excellent performance, close to ideal devices designed by electro-magnetic simulation
RF passive devices on Si with excellent performance, close to ideal devices designed by electro-magnetic simulation
Alternative title | IEEE Int’l Electron Device Meeting Technical Digest |
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Author | Search for: Chin, A.; Search for: Chan, K.; Search for: Wang, C.; Search for: Chen, C.; Search for: Liang, V.; Search for: Chen, J.; Search for: Chien, S.; Search for: Sun, S.; Search for: Duh, D.; Search for: Lin, W.; Search for: Zhu, C.; Search for: Li, M.; Search for: McAlister, Sean1; Search for: Kwong, D-L |
Name affiliation |
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Format | Text, Article |
Conference | IEEE Int’l Electron Device Meeting, 2003 |
NPARC number | 3539221 |
Export citation | Export as RIS |
Report a correction | Report a correction (opens in a new tab) |
Record identifier | bb431d21-f8a3-44c2-9656-11baec684532 |
Record created | 2009-03-01 |
Record modified | 2020-04-16 |
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