| Abstract | A detailed time-resolved photoluminescence study of the deep-donor bound-exciton-emission band frequently observed below the acceptor bound-exciton transition, in high-purity n-type InP grown by chemical-beam epitaxy, has been performed. The decay lifetimes across the broad emission band increase with increasing exciton localization energy. A theory developed by Rashba and Gurgenishvili [Fiz. Tverd. Tela (Leningrad) 4, 1029 (1962)] [Sov. Phys. Solid State 4, 759 (1962)] which predicts a three-halves dependence of the exciton-localization energy on the bound-exciton lifetimes has been observed in InP. |
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