| DOI | Resolve DOI: https://doi.org/10.1088/0268-1242/27/10/105020 |
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| Author | Search for: Liu, C.; Search for: Salehzadeh, O.; Search for: Poole, P.J.1; Search for: Watkins, S.P.; Search for: Kavanagh, K.L. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Core-shell; Depletion layer; Electrical contacts; GaAs; Gold catalysts; InAs; Metal growth; Nucleation and growth; P-type GaAs; Semiconductor nanowire; Catalysts; Electrodeposition; Gold; Indium arsenide; Nanowires; Semiconducting gallium; Gallium arsenide |
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| Abstract | Copper (Cu) and iron (Fe) electrical contacts to gallium arsenide (GaAs) and indium arsenide (InAs) nanowires (NWs) have been fabricated via electrodeposition. For undoped or low carbon-doped (10 17/cm 3), p-type GaAs NWs, Cu or Fe nucleate and grow only on the gold catalyst at the NW tip, avoiding the sidewalls. Metal growth is limited by the Au contact resistance due to thick sidewall depletion layers. For InAs NWs and heavier-doped, core-shell (undoped core-C-doped shell) GaAs NWs, metal nucleation and growth occurs on the sidewalls as well as on the gold catalyst limited now by the ion electrolyte diffusivity. © 2012 IOP Publishing Ltd. |
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| Publication date | 2012 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21269402 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c0cfd275-6136-42e6-8f4a-7d6afd483cbc |
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| Record created | 2013-12-12 |
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| Record modified | 2020-04-21 |
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