Characterizing ultrashort pulses with photon energies above 1.12 eV based on transient absorption in silicon thin films

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DOIResolve DOI: https://doi.org/10.1088/2515-7647/ad9cdb
AuthorSearch for: ORCID identifier: https://orcid.org/0000-0002-9237-1567; Search for: 1; Search for: ; Search for: ORCID identifier: https://orcid.org/0000-0002-5894-6611; Search for: ORCID identifier: https://orcid.org/0000-0002-6676-6856; Search for: 1ORCID identifier: https://orcid.org/0000-0002-3149-6374; Search for: ; Search for: ; Search for: ; Search for: ORCID identifier: https://orcid.org/0000-0001-6371-8501; Search for: 1ORCID identifier: https://orcid.org/0000-0001-8492-3408; Search for: ORCID identifier: https://orcid.org/0000-0002-3065-7156
Affiliation
  1. National Research Council Canada. Quantum and Nanotechnologies
FunderSearch for: Fonds de recherche du Québec. Nature et technologies; Search for: National Research Council of Canada. Quantum Sensors Program; Search for: Natural Sciences and Engineering Research Council of Canada; Search for: Canada Foundation for Innovation; Search for: PROMPT
FormatText, Article
Subjectpulse characterization; silicon; frequency-resolved optical switching; transient absorption
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PublisherIOP
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LanguageEnglish
Peer reviewedYes
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Record identifierc5e9063a-752e-402b-b71f-37aaf5d48479
Record created2025-06-05
Record modified2025-11-03
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